The role of band filling in tuning the high field phases of URu2Si2

We present a detailed study of the low temperature and high magnetic field phases in the chemical substitution series URu2Si2−xPx using electrical transport and magnetization in pulsed magnetic fields up to 65T. Within the hidden order region (0 < x < 0.035) the high field ordering is robust even as the hidden order temperature is suppressed. Earlier work shows that for 0.035 < x < 0.26 there is a Kondo lattice with a no-ordered state that is replaced by antiferromagnetism for 0.26 < x < 0.5. We observe a simplified continuation of the high field ordering in the no-order x-region and an enhancement of the high field state upon the destruction of the antiferromagnetism with magnetic field. These results closely resemble what is seen for URu2−xRhxSi2 , from which we infer that charge tuning uniformly controls the ground state of URu2Si2, regardless of whether s/p or d-electrons are replaced. This provides guidance for determining the specific factors that lead to hidden order versus magnetism in this family of materials.